ISSCC 2006 / SESSION 19 / ANALOG TECHNIQUES / 19 . 2 19 . 2 Frequency Compensation of an SOI Bipolar - CMOS - DMOS
نویسندگان
چکیده
The growth of in-car entertainment systems demands smart power devices, including audio power amplifiers. Despite the trend towards class-D systems, integrated class-AB amplifiers are still superior in terms of frequency response, integration level and ease of application. The market drive for lower distortion and higher stability demands good frequency compensation schemes. Still, to the best of our knowledge, no literature exists on frequency compensation of integrated MOS audio power amplifiers.
منابع مشابه
ISSCC 2009 / SESSION 19 / ANALOG TECHNIQUES / 19 . 6 19 . 6 A sub - 1 V Bandgap Voltage Reference in 32 nm FinFET Technology
The bulk CMOS technology is expected to scale down to about 32nm node and likely the successor would be the FinFET. The FinFET is an ultra-thin body multi-gate MOS transistor with among other characteristics a much higher voltage gain compared to a conventional bulk MOS transistor [1]. Bandgap reference circuits cannot be directly ported from bulk CMOS technologies to SOI FinFET technologies, b...
متن کاملISSCC 2015 / SESSION 19 / ADVANCED WIRELESS TECHNIQUES / 19 . 5 19 . 5 An HCI - Healing 60 GHz CMOS Transceiver
The research of 60GHz CMOS transceivers has bloomed due to their capability of achieving low-cost multi-Gb/s short-range wireless communications [1]. Considering practical use of the 60GHz CMOS transceivers, longer operation lifetime with high output power is preferred to provide reliable products. Unfortunately, as indicated in [2], the output power capability of the transmitter will gradually...
متن کاملISSCC 2007 / SESSION 17 / ANALOG TECHNIQUES AND PLLs / 17 . 2 17 . 2 A 0 . 65 V 2 . 5 GHz Fractional - N Frequency
For extremely-scaled CMOS technologies, supply voltages well below 1V will be required to maintain reliability [1]. Analog and RF design with standard devices then becomes very challenging because of the significant reduction in both the available signal swing and the available overdrive for biasing. We present ultralow-voltage design techniques that maintain all node voltages between the suppl...
متن کاملISSCC 2008 / SESSION 19 / PLLs & OSCILLATORS / 19 . 5 19 . 5 A 90 μ W 12 MHz Relaxation Oscillator with a – 162 dB FOM
Both ring oscillators and relaxation oscillators are subsets of RC oscillators featuring large tuning ranges and small areas. Figure 19.5.1 shows a typical relaxation oscillator with a capacitor and two switched current sources. Such relaxation oscillators have two advantages with respect to ring oscillators: 1) they have a constant frequency tuning gain; and 2) their phase can be read out cont...
متن کاملISSCC 2007 / SESSION 29 / ANALOG AND POWER MANAGEMENT TECHNIQUES / 29.2 29.2 A 5mA 0.6μm CMOS Miller-Compensated LDO Regulator with -27dB Worst-Case Power-Supply Rejection Using 60pF of On-Chip Capacitance
As dense digital circuitry is packed close to sensitive analog blocks for higher integration, SoC solutions are swamped in switching noise generated by digital circuits, RF blocks, and DCDC converters. In this harsh environment, linear regulators have to protect noise-sensitive analog blocks like VCOs and ADCs from coupled supply noise that has amplitudes on the order of hundreds of millivolts ...
متن کامل